Quantum Materials for Neuromorphic Computing

INVITED · Q42 · ID: 1850062

Presentations

  • ORAL · Invited

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    Publication: [1] Challenges in Materials and Devices for Resistive-Switching-Based Neuromorphic Computing, J. del Valle, J-G. Ramírez, M. J. Rozenberg, I. K. Schuller, J. App. Phys. 124, 211101 (2018). doi.org/10.1063/1.5047800
    [2] Preface to Special Topic: New Physics and Materials for Neuromorphic Computation, J. Grollier, S. Guha, H. Ohno, I. K. Schuller, J. App Phys. 124, 151801 (2018). doi.org/10.1063/1.5063776
    [3] Neuromorphic computing: Challenges from quantum materials to emergent connectivity, I. K. Schuller, A. Frano, R. C. Dynes, A. Hoffmann, B. Noheda, C. Schuman, A. Sebastian, and J. Shen, Appl. Phys. Lett. 120, 140401 (2022) doi.org/10.1063/5.0092382
    [4] Thermal Management in Neuromorphic Materials, Devices, and Networks, F. Torres, A. C. Basaran, I. K. Schuller, Advanced Materials, e2205098, (2022) doi.org/10.1002/adma.202205098

    Presenters

    • IVAN K SCHULLER

      • University of California, San Diego

    Authors

    • IVAN K SCHULLER

      • University of California, San Diego

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  • ORAL · Invited

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    Publication: [1] Vardi, N., Anouchi, E., Yamin, T., Middey, S., Kareev, M., Chakhalian, J., Dubi, Y., & Sharoni, A. (2017). Ramp-Reversal Memory and Phase-Boundary Scarring in Transition Metal Oxides. Advanced Materials, 29, 1605029. https://doi.org/10.1002/adma.201605029
    [2] Anouchi, E., Vardi, N., Kalcheim, Y., Schuller, I. K., & Sharoni, A. (2022). Universality and microstrain origin of the ramp reversal memory effect. Physical Review B, 106, 205145. https://doi.org/10.1103/PhysRevB.106.205145
    [3] Fried, A., Tagouri-Cohen, G., & Sharoni, A. (2023). Role of grain size and substrate epitaxial matching in defining the properties of the Ramp Reversal Memory. Phys. Rev. B., under review
    [4] Anouchi, E., Fried, A., & Sharoni, A. Writing and erasing speeds of the Ramp Reversal Memory - indicating ion motion as the memory source. Under preparation.

    Presenters

    • Amos Sharoni

      • Bar Ilan University

    Authors

    • Amos Sharoni

      • Bar Ilan University

    • Elihu Anouchi

      • Bar-Ilan Univeristy

    • Avital Fried

      • Bar-Ilan University

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  • ORAL · Invited

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    Publication: [1] Chiu, I.-T. et al., Phys. Rev. Mater. 5, 064416 (2021). [2] Zhang, S. & Galli, G., npj Comput. Mater. 6, 170 (2020). [3] Zhang, S., Vo, H. & Galli, G., Chem. Mater. 33, 3187–3195 (2021). [4] Zhang, S et al., Chem. Mater. 34, 2076-2084 (2022). [5] Zhang, S and Galli, G., (2023), in preparation.

    Presenters

    • Shenli Zhang

      • University of Chicago

    Authors

    • Shenli Zhang

      • University of Chicago

    • Giulia Galli

      • University of Chicago

    • I-Ting Chiu

      • University of California, Davis

    • Min-Han Lee

      • Applied Materials

    • Brandon Gunn

      • University of California, San Diego

    • Mingzhen Feng

      • University of California, Davis
      • University of California Davis
      • University of Calilfornia, Davis

    • Tae Joon Park

      • Purdue University

    • Padraic Shafer

      • Lawrence Berkeley National Lab
      • Lawrence Berkeley National Laboratory
      • Brookhaven National Laboratory
      • University of California, Davis

    • Alpha T N'Diaye

      • Lawrence Berkeley National Lab
      • Lawrence Berkeley National Laboratory

    • Fanny M Rodolakis

      • Argonne National Laboratory

    • Shriram Ramanathan

      • Rutgers University

    • Alex Frano

      • University of California, San Diego

    • IVAN K SCHULLER

      • University of California, San Diego

    • Yayoi Takamura

      • University of California, Davis

    View abstract →