Probing Kinetic Inductance in Thin Niobium Diselenide (NbSe<sub>2</sub>) through Microwave Measurements
ORAL
Abstract
We developed hybrid superconducting microwave resonators incorporating van der Waals (vdW) superconductors to explore the microwave (MW) response of superconducting 2D materials in the GHz regime. We first established a reliable technique to contact thin NbSe2,entirely encapsulated with hexagonal Boron Nitride (hBN), to a coplanar Al resonator. Then, we fabricated a hybrid Al-NbSe2 resonator and measured the kinetic inductance of thin NbSe2 at low temperature in the low-photon number limit. In this talk, we share our findings from the microwave characterizations of Al-NbSe2 resonators, where the thickness of NbSe2 will vary. Furthermore, we discuss the observed relation between the kinetic inductance and the thickness of the thin NbSe2. Our approach contributes to understanding the MW properties of superconducting 2D materials with potential implications for their utilization in emerging technologies.
*This research was funded in part by the US Army Research Office grant no. W911NF-2210023, by the National Science Foundation QII-TAQS grant no. OMA-1936263, and by the Under Secretary of Defense for Research and Engineering under Air Force Contract No. FA8702-15-D-0001. S.Z. acknowledges support from the Schlumberger Foundation Faculty for the Future Fellowship. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of the US Government.
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Presenters
Sameia Zaman
Massachusetts Institute of Technology MI
Massachusetts Institute of Technology
Massachusetts Institute of Technology (MIT)
Authors
Sameia Zaman
Massachusetts Institute of Technology MI
Massachusetts Institute of Technology
Massachusetts Institute of Technology (MIT)
Joel I Wang
Massachusetts Institute of Technology MI
Massachusetts Institute of Technology
Miuko Tanaka
Massachusetts Institute of Technology (MIT)
Massachusetts Institute of Technology
Thomas Werkmeister
Harvard University
Max Hays
MIT
Massachusetts Institute of Technology (MIT)
Massachusetts Institute of Technology MI
Massachusetts Institute of Technology
Massachussets Institute of Technology
Massachusetts Institute of Technology MIT
Daniel Rodan Legrain
Massachusetts Institute of Technology - MIT
Aranya Goswami
Massachusetts Institute of Technology
MIT
Thao H Dinh
Harvard University
Massachusetts Institute of Technology MIT
Massachusetts Institute of Technology
Michael A Gingras
MIT Lincoln Laboratory
Bethany M Niedzielski
MIT Lincoln Lab
MIT Lincoln Laboratory
Hannah M Stickler
MIT Lincoln Laboratory
Mollie E Schwartz
MIT Lincoln Laboratory
Jonilyn L Yoder
MIT Lincoln Lab
MIT Lincoln Laboratory
Kenji Watanabe
National Institute for Materials Science
NIMS
Research Center for Electronic and Optical Materials, National Institute for Materials Science
Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
National Institute for Material Science
Takashi Taniguchi
Kyoto Univ
National Institute for Materials Science
Research Center for Materials Nanoarchitectonics
Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
National Institute for Materials Sciences
NIMS
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
National Institute for Material Science
International Center for Materials Nanoarchitectonics, NIMS, Japan
International Center for Materials Nanoarchitectonics, Tsukuba
National Institue for Materials Science
Kyoto University
National Institute of Materials Science
International Center for Materials Nanoarchitectonics and National Institute for Materials Science