Oral: Imaging ferroelectric domains in twisted hexagonal boron nitride layers
ORAL
Abstract
Hexagonal boron nitride (hBN) has been mostly utilized as passive encapsulation or space layers in van der Waals heterostructures Recent studies of twisted hBN layers suggest that ferroelectric (FE) domains may form due to charge redistribution at the slid or twisted interfaces that break structural inversion symmetry. Here, we present a Kelvin probe force microscopy (KPFM) study on the electric control of FE domains. In addition to KPFM images, one can also monitor the domain flipping via exciton resonances in adjacent transition metal dichalcogenide monolayers.
*We gratefully acknowledge funding from the US Army Research Laboratory and the US Army Research Office under award W911NF-23-1-0364, National Science Foundation via MRSEC grants DMR-1720595 and DMR-2308817, DMREF DMR-2118806, DMR-2044920, DMR-2117438, Welch Foundation under grant F-1662.
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Presenters
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Kyoungpyo Lee
- The University of Texas at Austin