Valley-Polarized Magneto-Transport via a Quantum Point Contact in Bilayer Graphene
ORAL
Abstract
We investigate low temperature magneto-transport through a gate-defined quantum point contact in bilayer graphene. We show that the valley-specific quantum Hall states can be selectively manipulated by the local electrostatic configuration and study their dependence on magnetic and displacement fields. This work paves a path towards manipulating the valley degree of freedom in gate-defined bilayer graphene quantum devices.
*This work was supported by the National Science Foundation CAREER Award NSF-1944498
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Presenters
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Konstantin Davydov
- University of Minnesota