Electron correlation and topology in rhombohedral multilayer graphene

ORAL

Abstract

Rhombohedral stacked multilayer graphene is an ideal platform to search for correlated electron phenomena, due to its pair of flat bands touching at zero energy and further tunability by an electric field. Furthermore, its valley-dependent Berry phase at zero energy points to possible topological states when the isospin symmetry is broken by electron correlation. I will talk about DC transport measurements of pentalayer graphene without the moire effects. We observed a plethora of correlated and topological states including a ferro-valleytronic half-metal, a correlated insulating state and Chern insulator states. Our results point to a new direction of exploring electron correlation and topology in natural 2D crystals where the layer number plays a critical role.

*CIQM, NSF DMR-2225925

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Publication: Han, T., Lu, Z., Scuri, G. et al. Correlated insulator and Chern insulators in pentalayer rhombohedral-stacked graphene. Nat. Nanotechnol. (2023). https://doi.org/10.1038/s41565-023-01520-1
Han, T., Lu, Z., Scuri, G. et al. Orbital multiferroicity in pentalayer rhombohedral graphene. Nature (2023). https://doi.org/10.1038/s41586-023-06572-w

Presenters

  • Tonghang Han

    • Massachusetts Institute of Technology

Authors

  • Tonghang Han

    • Massachusetts Institute of Technology

  • Zhengguang Lu

    • Massachusetts Institute of Technology

  • Giovanni Scuri

    • Harvard University

  • Jiho Sung

    • Harvard University

  • Jue Wang

    • Harvard University

  • Tianyi Han

    • Massachusetts Institute of Technology MIT

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science

  • Takashi Taniguchi

    • Kyoto Univ
    • National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Sciences
    • NIMS
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, NIMS, Japan
    • International Center for Materials Nanoarchitectonics, Tsukuba
    • National Institue for Materials Science
    • Kyoto University
    • National Institute of Materials Science
    • International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Liang Fu

    • Massachusetts Institute of Technology MI
    • Massachusetts Institute of Technology
    • MIT

  • Hongkun Park

    • Harvard University

  • Long Ju

    • Massachusetts Institute of Technology