Giant Hall Switching by Surface-State-Mediated Spin-Orbit Torque in a Hard Ferromagnetic Topological Insulator
ORAL
Abstract
Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we demonstrate efficient SOT switching of a hard MTI, V-doped (Bi,Sb)2Te3 (VBST) with a large coercive field that can prevent the influence of an external magnetic field. A giant switched anomalous Hall resistance of 9.2 kΩ is realized, among the largest of all SOT systems. The SOT switching current density can be reduced to 2.8×105 A/cm2. Moreover, as the Fermi level is moved away from the Dirac point by both gate and composition tuning, VBST exhibits a transition from edge-state-mediated to surface-state-mediated transport, thus enhancing the SOT effective field to 1.56±0.12 T/ (106 A/cm2) and the spin Hall angle to 23.2±1.8 at 5 K. The findings establish VBST as an extraordinary candidate for energy-efficient magnetic memory devices.
*The authors acknowledge the support from the National Science Foundation (NSF) (DMR-1411085 and DMR-1810163) and the Army Research Office Multidisciplinary University Research Initiative (MURI) under grant numbers W911NF16-1-0472 and W911NF-19-S-0008. In addition, H.Z. acknowledges support from the U.S. Department of Commerce, NIST under financial assistance award 70NANB19H138. A.V.D. acknowledges support from the Material Genome Initiative funding allocated to NIST.
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Publication:L. Tai, H. He, S. K. Chong, H. Zhang, G. Qiu, Y. Li, H.-Y. Yang, T.-H. Yang, X. Dong, Y. Ren, … K. L. Wang. "Giant Hall Switching by Surface-State-Mediated Spin-Orbit Torque in a Hard Ferromagnetic Topological Insulator." arXiv: 2306.05603 (2023).
Presenters
Lixuan Tai
University of California, Los Angeles
Department of Electrical and Computer Engineering, University of California, Los Angeles
Authors
Lixuan Tai
University of California, Los Angeles
Department of Electrical and Computer Engineering, University of California, Los Angeles