Defects in Diamond and Other Semiconductors
FOCUS · N03 · ID: 2154731
Presentations
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Revisiting the Formulation of Charged Defects in Solids
ORAL · Invited
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Presenters
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Shengbai Zhang
- Rensselaer Polytechnique Institute
- Rensselaer Polytechnic Institute
Authors
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Shengbai Zhang
- Rensselaer Polytechnique Institute
- Rensselaer Polytechnic Institute
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Exploring Bulk <sup>13</sup>C Nuclei at the Low Temperature and High Magnetic Field Regime
ORAL
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Publication: [1] Beatrez, W., et al., Phys. Rev. Lett. 127, 170603 (2021)
[2] Sahin, O., Nat. Commun. 13, 5486 (2022)
[3] Beatrez, W., et al., Phys. Rev. Lett. 131, 010802 (2023)
[4] Takahashi, S., et al., Phys. Rev. Lett. 101, 047601 (2008)Presenters
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Cooper M Selco
- University of California Berkeley
Authors
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Cooper M Selco
- University of California Berkeley
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Kieren A Harkins
- University of California Berkeley
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David Marchiori
- University of California Berkeley
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Ashok Ajoy
- University of California, Berkeley
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Photocurrent mapping in optoelectronic diamond devices
ORAL
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Publication: Photocurrent mapping in optoelectronic diamond devices, in prep.
Presenters
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Alexander A Wood
- University of Melbourne
Authors
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Alexander A Wood
- University of Melbourne
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Daniel J McCloskey
- University of Melbourne
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Artur Lozovoi
- City College of New York
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Russell M Goldblatt
- University of Melbourne
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Kaih T Mitchell
- University of Melbourne
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David A Broadway
- RMIT University
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Christopher T Lew
- University of Melbourne
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Brett C Johnson
- RMIT University
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Jean-Philippe Tetienne
- RMIT University
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Carlos A Meriles
- City College of New York
- The City College of New York
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Andy M Martin
- University of Melbourne
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Solvated Electrons at the Diamond-Water Interface: Insights from NV Centers
ORAL
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Presenters
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Kang Xu
- CUNY-The City College of New York
- City College of New York
Authors
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Kang Xu
- CUNY-The City College of New York
- City College of New York
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Daniela Pagliero
- City College of New York
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Gustavo Lopez
- The City University of New York, Lehman College
- Lehman College of the City University of New York
- Lehman College
- CUNY-Lehman College
- CUNY-Lehman College CUNY-Lehman College
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Nicolas Giovambattista
- The City University of New York, Brooklyn College
- Brooklyn College of the City University of New York
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Abraham Wolcott
- City College of New York
- San José State University
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Carlos A Meriles
- City College of New York
- The City College of New York
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First-principles calculation of the Stark shift for the NV center in diamond
ORAL
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Presenters
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Louis Alaerts
- Dartmouth College
Authors
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Louis Alaerts
- Dartmouth College
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Yihuang Xiong
- Dartmouth College
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Alp Sipahigil
- University of California, Berkeley and Lawrence Berkeley National Laboratory
- University of California, Berkeley
- University of California, Berkeley; Lawrence Berkeley National Laboratory
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Sinead M Griffin
- Lawrence Berkeley National Laboratory
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Geoffroy Hautier
- Dartmouth College
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Effective mass approximation for spatial structures of two different single acceptors imaged by STM: bismuth in silicon and manganese in indium antimonide
ORAL
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Presenters
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Julian Zanon
- Department of Applied Physics, Eindhoven University of Technology
Authors
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Julian Zanon
- Department of Applied Physics, Eindhoven University of Technology
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Michael E Flatté
- University of Iowa
- Department of Physics and Astronomy, University of Iowa
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High-pressure Thermoelectric properties of ZnAs and CdAs
ORAL
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Presenters
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Zakariae Darhi
- Michigan Technological University
Authors
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Zakariae Darhi
- Michigan Technological University
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Ashima Rawat
- Michigan Technological University
- MTU
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Ravindra Pandey
- Michigan Technological University
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Larbi Elfarh
- Mohammed First University
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Origin of defect intolerance in low-symmetry semiconductors
ORAL
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Presenters
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Menglin Huang
- Fudan University
- Fudan Univ
Authors
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Menglin Huang
- Fudan University
- Fudan Univ
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Shanshan Wang
- Fudan University
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Shiyou Chen
- Fudan University
- Fudan Univ
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Designing carbon-based defects in icosahedral alpha boron from first principles
ORAL
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Publication: 1. A. Chakraborti, Y. Cho, J. Sjakste, B. Baptiste, L. Henry, N. Guignot, Y. Le Godec, N. Vast, Acta Materialia 249, 118820 (2023).
2. Engineering in-gap levels in alpha boron with carbon-based defects, Y. Cho, J. Sjakste, N. Vast, in preparation.Presenters
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Yeonsoo Cho
- Ecole Polytechnique
Authors
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Yeonsoo Cho
- Ecole Polytechnique
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Jelena Sjakste
- CNRS
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Nathalie Vast
- CEA-Saclay
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Ab-initio study of the energy competition between $Gamma$ and K valleys in bilayer transition metal dichalcogenides
ORAL
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Presenters
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Samuel W Olin
- Binghamton University
Authors
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Samuel W Olin
- Binghamton University
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Wei-Cheng Lee
- Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902, USA
- Binghamton University
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Erekle Jmukhadze
- Binghamton University
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Allan H. H MacDonald
- The University of Texas at Austin
- University of Texas, Austin
- Dept. of Physics, Univ. of Texas at Austin
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Modulation of optical selection rules in twisted transition metal dichalcogenide heterobilayer.
ORAL
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Publication: 1. W. Li, T. Brumme, and T. Heine, "Relaxation effects in transition metal dichalcogenide bilayer heterostructures." (Manuscript submitted for npj 2D Mater. Appl.).
2. W. Li, G. Jha, T. Brumme, and T. Heine, "Modulation of optical selection rules in twisted transition metal dichalcogenide heterobilayer." (in preparation).Presenters
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Wei Li
- Technische Universität Dresden
Authors
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Wei Li
- Technische Universität Dresden
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Gautam Jha
- Technische Universität Dresden
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Thomas Brumme
- Technische Universität Dresden
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Thomas Heine
- Technische Universität Dresden
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Langevin Dynamics/Monte Carlo Simulations of Structural and Dielectric Modulations of Moire Materials
ORAL
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Presenters
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Steven B Hancock
- JHUAPL
Authors
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Steven B Hancock
- JHUAPL
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David P Landau
- University of Georgia
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Yohannes Abate
- University of Georgia
- Department of Physics and Astronomy, University of Georgia, Athens, GA
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