Visualizing spin-valley drift current in WS₂/WSe₂ heterostructures

Transition metal dichalcogenides (TMDCs) materials hold promise for spintronic and valleytronic applications due to their ability to generate and control valley-polarized excitations using circularly polarized photons. In this work, we demonstrate the efficient generation of a locked spin-valley drift current in a WS₂/WSe₂ heterostructure by applying an in-plane electric field enabled by α-RuCl₃ hole doping in the contact regions. We show that electrostatic gating and in-plane field manipulation allow precise control of the valley drift current, offering potential applications in valleytronics.