Synergistic correlated states and nontrivial topology in coupled graphene-insulator heterostructures
ORAL
Abstract
Graphene has aroused great attention due to the intriguing properties associated with its low-energy Dirac Hamiltonian. When graphene is coupled with a correlated insulating substrate, electronic states that cannot be revealed in either individual layer may emerge in a synergistic manner. Here, we theoretically study the correlated and topological states in Coulomb-coupled and gate-tunable graphene-insulator heterostructures. By electrostatically aligning the electronic bands, charge carriers transferred between graphene and the insulator can yield a long-wavelength electronic crystal at the interface, exerting a superlattice Coulomb potential on graphene and generating topologically nontrivial subbands. This coupling can further boost electron-electron interaction effects in graphene, leading to a spontaneous bandgap formation at the Dirac point and interaction-enhanced Fermi velocity. Reciprocally, the electronic crystal at the interface is substantially stabilized with the help of cooperative interlayer Coulomb coupling. We propose a number of substrate candidates for graphene to experimentally demonstrate these effects.
*We would like to thank Jian Kang and Jinhai Mao for valuable discussions, and to thank Hanwen Wang for the help in making the plots. X.L., S.Z., Z.G., and J.L. acknowledge support from the National Key R & D program of China (grant No. 2020YFA0309601), the National Natural Science Foundation of China (grant No. 12174257), and the start-up grant of ShanghaiTech University. Y.W., X.G., K.Y., and Z.H. acknowledge support from the National Key R & D program of China (grant No.2022YFA1203903) and National Natural Science Foundation of China (grant No. 92265203, 11974357).
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Publication:Lu, X., Zhang, S., Wang, Y. et al. Synergistic correlated states and nontrivial topology in coupled graphene-insulator heterostructures. Nat Commun 14, 5550 (2023). https://doi.org/10.1038/s41467-023-41293-8
Presenters
Xin Lu
ShanghaiTech University
Authors
Xin Lu
ShanghaiTech University
Shihao Zhang
Hunan University
Yaning Wang
Shenyang National Laboratory for Materials Science