Orbitally Controlled Quantum Hall State in Decoupled Two-Bilayer Graphene Sheets

ORAL

Abstract

We report on integer and fractional quantum Hall states in a stack of two twisted Bernal bilayer graphene sheets. By exploiting the momentum mismatch in reciprocal space, the single-particle tunneling between both bilayers is suppressed. Since the bilayers are spatially separated by only 0.34 nm, the stack benefits from strong interlayer Coulombic interactions. These interactions can cause the formation of a Bose–Einstein condensate. Indeed, such a condensate is observed for half-filling in each bilayer sheet. However, only when the partially filled levels have orbital index 1. It is absent for partially filled levels with orbital index 0. This discrepancy is tentatively attributed to the role of skyrmion/anti-skyrmion pair excitations and the dependence of the energy of these excitations on the orbital index. The application of asymmetric top and bottom gate voltages enables to influence the orbital nature of the electronic states of the graphene bilayers at the chemical potential and to navigate in orbital mixed space. The latter hosts an even denominator fractional quantum Hall state at total filling of −3/2. These observations suggest a unique edge reconstruction involving both electrons and chiral p-wave composite fermions.

*National Research Foundation of Korea. Grant Numbers: NRF-2020R1C1C1006914, NRF-2022M3H3A1098408, NRF-2022H1D3A3A01077468 DGIST R&D program. Grant Number: 22-CoE-NT-01 EU core 3 Graphene Flagship Program and the SPP 2244 JSPS KAKENHI. Grant Numbers: 19H05790, 20H00354, 21H05233 the partner group program of the Max Planck Society

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Presenters

  • Soyun Kim

    • Daegu Gyeongbuk Institute of Science and Technology

Authors

  • Soyun Kim

    • Daegu Gyeongbuk Institute of Science and Technology

  • Dohun Kim

    • Daegu Gyeongbuk Institute of Science and Technology

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science

  • Takashi Taniguchi

    • Kyoto Univ
    • National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Sciences
    • NIMS
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, NIMS, Japan
    • International Center for Materials Nanoarchitectonics, Tsukuba
    • National Institue for Materials Science
    • Kyoto University
    • National Institute of Materials Science
    • International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Jurgen H Smet

    • Max Planck Institute for Solid State Physics

  • Youngwook Kim

    • DGIST
    • Daegu Gyeongbuk Institute for Science and Technology