Subband dependent g-factor in a monolayer WSe<sub>2</sub> 1D channel

ORAL

Abstract

One of the most promising and exciting family of two-dimensional (2D) materials is the semiconducting transition metal dichalcogenides (TMDs). Their lack of inversion symmetry at the monolayer limit and the presence of transition metals leads to opposite spins being locked to opposite valleys, also known as spin-valley locking, a phenomenon that can be leveraged for many quantum technologies. The difficulty in achieving low resistance ohmic contacts and having high quality materials make quantum transport measurements in monolayer TMDs challenging. In this presentation, we demonstrate ballistic transport in low contact resistance and high mobility samples (> 20,000 cm2V-1s-1) with gate defined 1D channels and nano-constrictions in monolayer tungsten diselenide (WSe2). We observe well defined conductance quantization up to G = 8 e2/h, and demonstrate that the hole effective g-factor in this system depends on the total amount of populated 1D subbands.

*This work was supported by the High Throughput and Secure Networks Challenge Program and the Quantum Sensors Challenge Program at the National Research Council of Canada and the FRQNT Master's training scholarship. This research was supported by NSERC QC2DM Strategic Grant No. STPG-521420 and NSERC Discovery Grant No. RGPIN- 2019-05714

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Presenters

  • Antoine Labbé

    • University of Ottawa
    • University of Ottawa / National Research Council Canada

Authors

  • Antoine Labbé

    • University of Ottawa
    • University of Ottawa / National Research Council Canada

  • Justin Boddison-Chouinard

    • University of Ottawa / National Research Council Canada

  • Alex Bogan

    • National Research Council of Canada
    • National Research Council Canada

  • Pedro J Barrios

    • National Research Council of Canada
    • National Research Council Canada

  • Philip Waldron

    • National Research Council of Canada
    • National Research Council Canada

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science

  • Takashi Taniguchi

    • Kyoto Univ
    • National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Sciences
    • NIMS
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, NIMS, Japan
    • International Center for Materials Nanoarchitectonics, Tsukuba
    • National Institue for Materials Science
    • Kyoto University
    • National Institute of Materials Science
    • International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Marek Korkusinski

    • National Research Council
    • Natl Res Council

  • Adina A Luican-Mayer

    • University of Ottawa

  • Louis Gaudreau

    • Natl Res Council