Spin polarized hole magneto-transport at low filling factors in monolayer WSe<sub>2</sub>

ORAL

Abstract

Challenges associated with the quality of electrical contacts in semiconducting transition metal dichalcogenides have hampered the progress of transport studies, especially at low temperature and in the low carrier density regime.

Here, we first present a device structure for achieving low resistive ohmic contacts that relies on the independent tunability of the carrier density in the contact region. We demonstrate that these low resistive ohmic contacts survive at temperatures as low as 10 mK and can successfully be used in transport measurements to probe a channel region down to the low carrier density regime.

We then report magneto-transport measurements of a monolayer tungsten diselenide (WSe2) heterostructure performed in perpendicular magnetic fields up to 8 T. We discuss the appearance of a Landau fan diagram in which we observe fully spin polarized hole transport at low filling factors all the way down to ν = 1. Finally, we discuss the behaviour of the Landau fan diagram at higher densities, reflecting spin-orbit coupling effects in monolayer WSe2.

*This work was supported by the High Throughput and Secure Networks Challenge Program and the Quantum Sensors Challenge Program at the National Research Council of Canada.

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Presenters

  • Justin Boddison-Chouinard

    • University of Ottawa / National Research Council Canada

Authors

  • Justin Boddison-Chouinard

    • University of Ottawa / National Research Council Canada

  • Antoine Labbé

    • University of Ottawa
    • University of Ottawa / National Research Council Canada

  • Alex Bogan

    • National Research Council of Canada
    • National Research Council Canada

  • Pedro J Barrios

    • National Research Council of Canada
    • National Research Council Canada

  • Philip Waldron

    • National Research Council of Canada
    • National Research Council Canada

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science

  • Takashi Taniguchi

    • Kyoto Univ
    • National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Sciences
    • NIMS
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, NIMS, Japan
    • International Center for Materials Nanoarchitectonics, Tsukuba
    • National Institue for Materials Science
    • Kyoto University
    • National Institute of Materials Science
    • International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Marek Korkusinski

    • National Research Council
    • Natl Res Council

  • Adina A Luican-Mayer

    • University of Ottawa

  • Louis Gaudreau

    • Natl Res Council