Imaging conduction band electrons in gated monolayer TMDC using µARPES

ORAL

Abstract

Understanding of electric field induced doping effects in the electronic structure of direct band gap single-layer (SL) semiconductors is crucial for developing electronic and optoelectronic applications of the materials. However, direct visualization of the electronic structure remains experimentally challenging for in situ gated 2D material devices. Here, we apply in operando micrometer scale angle-resolved photoemission spectroscopy at the ASTRID2 light source in order to characterize the electronic structure of a SL WS2 gateable device. Using micromechanical cleaving and transfer methods, the SL WS2 is partially contacted to a graphene top electrode and placed on a boron nitrite dielectric on a graphite back-gate. We directly visualize distinct conduction band populations, band gap renormalization and charge transfer processes across the bare WS2 and graphene/WS2 interface. Our observations provide a better understanding of band renormalization and carrier doping in two-dimensional heterostructure devices combining direct gap semiconductors and graphene electrodes.

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Publication: Planned for publication, currently under preparation, may be it will be available publicly by the conference duration

Presenters

  • Chakradhar Sahoo

    • Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark

Authors

  • Chakradhar Sahoo

    • Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark

  • Yann i Veld

    • Institute for Molecules and Materials, Radboud University, 6525 AJ Nijmegen, the Netherlands

  • Alfred J Jones

    • Department of Physics and Astronomy, Aarhus University
    • Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark

  • Zhihao Jiang

    • Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark

  • Paulina E Majchrzak

    • Stanford University
    • Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark

  • Kimberly Hsieh

    • Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark

  • K. Watanabe

    • Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan

  • T. Taniguchi

    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan

  • Yong P Chen

    • Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark

  • Jill A Miwa

    • Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark

  • Malte Roesner

    • Institute for Molecules and Materials, Radboud University, 6525 AJ Nijmegen, the Netherlands
    • Radboud University

  • Søren Ulstrup

    • Department of Physics and Astronomy, Aarhus University
    • Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark