Current-bias spectroscopy of in-plane magnetoresistance on the microtesla scale in twisted monolayer-trilayer graphene

ORAL

Abstract

Twisted graphene multilayers offer a powerful experimental platform to investigate the interplay between broken symmetries, orbital magnetism, and sometimes superconductivity. In this work, we report the observation of an extraordinary negative in-plane magnetoresistance response in twisted monolayer-trilayer graphene, localized to the same gate voltages where the anomalous Hall effect is also observed. Under a nanoampere AC bias, the device resistance drops by as much as 40% with the application of 1 mT of in-plane magnetic field, mirroring previous measurements in twisted double bilayer graphene. Mapping out the detailed current-voltage characteristics of the sample reveals that this nanoamp magnetoresistance peak hides an intricate pattern of sharp differential resistance peaks activated by 10's of pA bias. These differential resistance peaks move rapidly to higher bias with in-plane magnetic field, explaining the millitelsa-wide magnetoresistance peaks observed in earlier AC measurements, but are only weakly modified by out-of-plane magnetic fields an order of magnitude larger. Our findings impose strong constraints on possible mechanisms for this extreme low-field magnetoresistance, which may be universal to orbital magnets of moiré graphene.

**Thanks to: European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme under grant agreement No 951541; Stewart Blusson; Quantum Matter Institute; Natural Sciences and Engineering Research Council of Canada; Canada Foundation for Innovation; Canadian Institute for Advanced Research

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Presenters

  • Ruiheng Su

    • The University of British Columiba

Authors

  • Ruiheng Su

    • The University of British Columiba

  • Dacen Waters

    • University of Washington

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science

  • Takashi Taniguchi

    • Kyoto Univ
    • National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Sciences
    • NIMS
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, NIMS, Japan
    • International Center for Materials Nanoarchitectonics, Tsukuba
    • National Institue for Materials Science
    • Kyoto University
    • National Institute of Materials Science
    • International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Matthew Yankowitz

    • University of Washington

  • Joshua Folk

    • University of British Columbia