Exciton Stark shift induced by a twisted hBN substrate

ORAL

Abstract

Twisted hexagonal boron nitride (t-hBN) layers have been demonstrated to exhibit ferroelectric domains. When a functional layer is placed on the top surface of the t-hBN substrate, the electrostatic potential from the interface of t-hBN can modulate an adjacent layer. Here, we report the observation of exciton Stark shift in a MoSe2 monolayer placed on top of the t-hBN substrate due to polarization field from charge redistribution at the interface of t-hBN. We correlate Kelvin probe force microscopy (KPFM) measurements with optical spectroscopic measurements. These findings suggest a new way to modulate atomically thin semiconductors and can significantly expand universal moiré superlattices in engineering material properties.

*We gratefully acknowledge funding from the Air Force Office of Scientific Research under award FA2386-21-1-4067, National Science Foundation via grants MRSEC DMR-2308817, DMR-2122041, DMR-2044920, DMR-2117438, DMR-1720595, Welch Foundation under grant F-1662, JSPS KAKENHI under grants 19H05790, 20H00354, 21H05233, RGC of HKSAR under grant HKU SRFS2122-7S05 and Croucher Foundation.

–

Presenters

  • Dong Seob Kim

    • The University of Texas at Austin
    • University of Texas at Austin

Authors

  • Dong Seob Kim

    • The University of Texas at Austin
    • University of Texas at Austin

  • Chengxin Xiao

    • The University of Hong Kong

  • Roy C Dominguez

    • Texas State University

  • Kyungpyo Lee

    • University of Texas at Austin

  • Rigo Mayorga-Luna

    • Texas State University

  • Hyunsue Kim

    • University of Texas at Austin

  • Zhida Liu

    • University of Texas at austin
    • University of Texas at Austin

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science

  • Takashi Taniguchi

    • Kyoto Univ
    • National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Sciences
    • NIMS
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, NIMS, Japan
    • International Center for Materials Nanoarchitectonics, Tsukuba
    • National Institue for Materials Science
    • Kyoto University
    • National Institute of Materials Science
    • International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Chih-Kang Shih

    • University of Texas at Austin

  • Yoichi Miyahara

    • Texas State University

  • Wang Yao

    • The University of Hong Kong

  • Xiaoqin Elaine Li

    • University of Texas at Austin
    • The University of Texas at Austin