Defects and Doping in III-Vs and their Alloys
ORAL · F05 · ID: 2154723
Presentations
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doped: a python package for solid-state defect and dopant calculations
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Publication: S. R. Kavanagh et al. In Submission to the Journal of Open Source Software
Presenters
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Seán R Kavanagh
- Imperial College London
Authors
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Seán R Kavanagh
- Imperial College London
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Aron Walsh
- Imperial College London
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David O Scanlon
- University of Birmingham
- University College of London
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Accelerating GW calculations of point defects with the defect-patched screening approximation
ORAL
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Presenters
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Du Li
- Washington University in St. Louis
Authors
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Du Li
- Washington University in St. Louis
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Zhenfei Liu
- Wayne State University
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Li Yang
- Washington University, St. Louis
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Characterizing 3D Defect Networks in GaAs Nanowires using Coherent X-ray Diffractive Imaging
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Publication: "Dislocations and Stacking Faults in GaAs Characterized in 3 Dimensions using Coherent X-ray Imaging" Manuscript under preparation
Presenters
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Julie J Barringer
- Rensselaer Polytechnic Institute
Authors
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Julie J Barringer
- Rensselaer Polytechnic Institute
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Edwin Fohtung
- Rensselaer Polytechnic Institute
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Anders Mikkelsen
- Lund University
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Influence of Non-stoichiometry and Local Atomic Environments on Carrier Transport in GaAs<sub>1-x-y</sub>N<sub>x</sub>Bi<sub>y</sub> Alloys
ORAL
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Publication: J.W. Mitchell, T.-Y. Huang, C.M. Greenhill, T. Jen, Y.-C. Yang, K. Hammond, B. Arnold, J.N. Heyman, and R.S. Goldman, "Influence of Nonstoichiometry and Local Atomic Environments on Carrier Transport in GaAs1-x-yNxBiy alloys", to be submitted (2023).
Presenters
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Jared W Mitchell
- University of Michigan
Authors
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Jared W Mitchell
- University of Michigan
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James N Heyman
- Macalester College
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Rachel S Goldman
- University of Michigan
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Christian M Greenhill
- University of Michigan
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Tao-Yu Huang
- University of Michigan
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Timothy Jen
- University of Michigan
- Intel Corporation
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Kyle Hammond
- University of Michigan
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Yu-Chen Yang
- University of Michigan
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Rare-earth impurities in III-V semiconductors and their alloys
ORAL
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Presenters
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Ruiqi Hu
- University of Delaware
Authors
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Ruiqi Hu
- University of Delaware
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Intuon Chatratin
- University of Delaware
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Quoc Dai Q HO
- University of Delaware
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Quang D To
- University of Delaware
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Garnett W Bryant
- National Institute of Standards and Technology
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Anderson Janotti
- University of Delaware
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Onset of tetrahedral interstitial formation in GaAsN alloys
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Publication: Onset of tetrahedral interstitial formation in GaAsN alloys (In preparation)
Presenters
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Joshua Cooper
- University of Michigan
Authors
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Joshua Cooper
- University of Michigan
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Timothy Jen
- University of Michigan
- Intel Corporation
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Drew Novak
- University of Michigan
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Fabian Naab
- University of Michigan
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Yongqiang Wang
- Los Alamos National Laboratory
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Rachel S Goldman
- University of Michigan
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Lateral strain in InGaAsSb epitaxial layers grown by LPE: Effect on structural and optical properties
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Presenters
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Julio G G Mendoza-Alvarez
- Physics Dept-Cinvestav-IPN
Authors
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Julio G G Mendoza-Alvarez
- Physics Dept-Cinvestav-IPN
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Gerardo Villa-Martinez
- SEPI-ESIME Ticoman
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Miguel Angel Gonzalez-Morales
- UPIITA-IPN
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Jose de Jesus Cruz-Bueno
- CONAHCYT-UPIITA-IPN
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Mariano Ramirez-Lopez
- UPIITA-IPN
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Marlene Camacho-Reynoso
- PNyN-Cinvestav-IPN
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Patricia Rodriguez-Fragoso
- Depto de Fisica-Cinvestav-IPN
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Yenny Casallas-Moreno
- CONAHCYT-UPIITA-IPN
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Jose Luis Herrera-Perez
- UPIITA-IPN
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Electronic properties of InAlAs and InGaAs alloys containing a few percent of Bi
ORAL
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Presenters
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Abdul Saboor
- University of Delaware
Authors
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Abdul Saboor
- University of Delaware
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Ruiqi Hu
- University of Delaware
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Anderson Janotti
- University of Delaware
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Defects in as-processed, irradiated, and stressed GaAs-based device structures
ORAL
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Presenters
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Andrew O'Hara
- Western Michigan University
- Department of Physics, Western Michigan University
Authors
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Andrew O'Hara
- Western Michigan University
- Department of Physics, Western Michigan University
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Xuyi Luo
- Department of Electrical and Computer Engineering, Vanderbilt University
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Enxia Zhang
- Department of Electrical and Computer Engineering, University of Central Florida
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Ronald D Schrimpf
- Vanderbilt University
- Department of Electrical and Computer Engineering, Vanderbilt University
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Daniel M Fleetwood
- Vanderbilt University
- Department of Electrical and Computer Engineering, Vanderbilt University
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Sokrates T Pantelides
- Department of Physics and Astronomy, Vanderbilt University
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Atomic scale analysis of N dopants in InAs using DFT and X-STM
ORAL
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Presenters
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Tom Verstijnen
- Eindhoven University of Technology
Authors
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Tom Verstijnen
- Eindhoven University of Technology
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Douwe Tjeertjes
- Eindhoven University of Technology
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Paul M Koenraad
- Eindhoven University of Technology
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Edoardo G Banfi
- Eindhoven Technical University
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Quandong Zhuang
- Lancaster University
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Tuning van der Waals heterostructures and moiré materials with near-field electrostatics
ORAL
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Publication: Qunfei Zhou, Michele Kotiuga, and Pierre Darancet. "Analytical Theory of Near-Field Electrostatic Effects in Two-Dimensional Materials and van der Waals Heterojunctions." arXiv preprint arXiv:2205.04606 (2022).
Qunfei Zhou, et al. "Engineering the Electronic Structure of Two-Dimensional Materials with Near-Field Electrostatic Effects of Self-Assembled Organic Layers." arXiv preprint arXiv:2109.09990 (2021).Presenters
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Qunfei Zhou
- University of Kansas
Authors
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Qunfei Zhou
- University of Kansas
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Michele Kotiuga
- Ecole Polytechnique Federale de Lausanne
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Pierre Darancet
- Argonne National Laboratory
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Abstract Withdrawn
ORAL · Withdrawn
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The mystery of the "invisible" Ga vacancy in GaAs
ORAL
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Presenters
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Leopoldo Diaz
- Sandia National Laboratories
Authors
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Leopoldo Diaz
- Sandia National Laboratories
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Harold P Hjalmarson
- Sandia National Laboratories
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Jesse J Lutz
- Sandia National Laboratories
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Peter A Schultz
- Sandia National Laboratories
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Trap-assisted Non-radiative Recombination of C<sub>N</sub> in GaN
ORAL
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Publication: [1] F. Zhao et al., Phys. Rev. Lett. 131, 056402 (2023).
Presenters
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Hongyi Guan
- University of California, Santa Barbara
Authors
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Hongyi Guan
- University of California, Santa Barbara
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Fangzhou Zhao
- University of California, Santa Barbara
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Mark E Turiansky
- University of California, Santa Barbara
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Chris G Van de Walle
- University of California, Santa Barbara
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