Understanding tunable near-zero-field magnetoresistance in Si MOSFETs
ORAL
Abstract
Near-zero-field magnetoresistance (NZFMR) is a phenomenon that exists in a variety of semiconductor devices which contain paramagnetic defect centers. It is observed as a magnetic-field-dependent change in device current centered around zero applied field. NZFMR responses have already been shown to contain atomic-scale information about electron-nuclear hyperfine interactions at the paramagnetic defects involved in the process, making them a useful tool for defect identification [1,2]. In this work, we explore the tunability of the NZFMR response in Si metal-oxide-semiconductor field effect transistors using four different detection techniques. We connect the trends in NZMFR lineshape to underlying kinetics using an adaptation of the stochastic quantum Liouville equation [3]. Several potential applications of NZFMR tunability are also discussed, including semiconductor device reliability, NZFMR-based magnetometry, and quantum biology.
[1] J. P. Ashton et al., IEEE Transactions on Nuclear Science, 66, 1, (2019).
[2] E. B. Frantz et al., Journal of Applied Physics, 128.12 (2020): 124504.
[3] N. J. Harmon, et al. IEEE transactions on nuclear science, 67.7 (2020): 1669-1673.
[1] J. P. Ashton et al., IEEE Transactions on Nuclear Science, 66, 1, (2019).
[2] E. B. Frantz et al., Journal of Applied Physics, 128.12 (2020): 124504.
[3] N. J. Harmon, et al. IEEE transactions on nuclear science, 67.7 (2020): 1669-1673.
*This project was sponsored in part by the Department of Defense, Defense Threat Reduction Agency under grant numbers HDTRA1-18-0012 and HDTRA1-16- 0008. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred.
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Publication: S.J. Moxim, et al., "Tunable Zero-Field Magnetoresistance Responses in Si MOSFETs: Origins and Applications". In preparation for submission to Journal of Applied Physics, expected 2024.
Presenters
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Stephen J Moxim
- National Institute of Standards and Technology