Aligned Graphene/Hexagonal Boron Nitride Heterostructures as a Quantum Dot Canvas

ORAL

Abstract

Quantum dots (QD) are a perennial device testbed for the development of novel quantum sensors, bits, and simulators. Two-dimensional materials are atomically-thin and exhibit versatile properties when stacked onto one another. Their small lateral dimensions facilitate compacting many components into one device, enabling ultra high density quantum dot devices. There are a wide variety of heterostructure configurations that provide the necessary high tunability for QD devices. One such configuration consists of graphene (G) mated to hexagonal boron nitride (hBN) with aligned lattices. This configuration results in graphene with a band gap, a critical component for a QD device. In this presentation I will discuss the fabrication and characterization of aligned G/hBN heterostructures. Sample fabrication was done via polymer transfer method while sample characterization was done by Atomic Force Microscopy (AFM) and Piezo Force Microscopy (PFM). Such characterization yields critical topographical information and moire characteristics that will be utilized to determine sample viability for QD devices.

This work is supported by the Gordon and Betty Moore Foundation: Gordon and Betty Moore Foundation Grant DOI: 10.37807/GBMF11569

*This work is supported by the Gordon and Betty Moore Foundation: Gordon and Betty Moore Foundation Grant DOI: 10.37807/GBMF11569

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Presenters

  • Annette Z Asryan

    • University of California, Santa Cruz

Authors

  • Annette Z Asryan

    • University of California, Santa Cruz

  • Tianhui Zhu

    • University of California, Santa Cruz

  • Takashi Taniguchi

    • Kyoto Univ
    • National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Sciences
    • NIMS
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, NIMS, Japan
    • International Center for Materials Nanoarchitectonics, Tsukuba
    • National Institue for Materials Science
    • Kyoto University
    • National Institute of Materials Science
    • International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science

  • Jairo Velasco Jr.

    • University of California, Santa Cruz