Electric Field-driven Topological Phase Transitions in Twisted MoTe<sub>2</sub>

ORAL

Abstract

The fractional quantum anomalous Hall effect (FQAHE), a lattice analogue to the fractional quantum Hall effect, displays fractionally quantized Hall conductivity in the absence of an external magnetic field. This remarkable effect has recently been realized in twisted MoTe2 bilayer in rhombohedral stacking. In this talk, we will report our study of electrically tunable topological phase transitions in this new system. Near -1/2 filling, we observe a transition from the putative zero-field composite fermi-liquid state to a correlated insulating state and then to a metallic state with strong local magnetic interactions. Near -2/3 fillings, we reveal a competition between FQAHE and charge density wave order that breaks the translation symmetry. Our work shows that the large parameter space offered by tuning knobs such as electrostatic doping, twist angle, and electric field provides insight to the FQAHE and proximate phases.

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Publication: 1. Observation of Fractionally Quantized Anomalous Hall Effect, Heonjoon Park et al., Nature 622, 74–79 (2023)
2. Signatures of Fractional Quantum Anomalous Hall States in Twisted MoTe2 Bilayer, Jiaqi Cai et al., Nature 622, 63-68 (2023)
3. Programming Correlated Magnetic States via Gate Controlled Moiré Geometry, Eric Anderson et al., Science 381, 325-330 (2023)

Presenters

  • Heonjoon Park

    • University of Washington

Authors

  • Heonjoon Park

    • University of Washington

  • Jiaqi Cai

    • University of Washington

  • Eric Anderson

    • University of Washington at Seattle
    • University of Washington

  • Yinong Zhang

    • University of Washington

  • Jiayi Zhu

    • University of Washington

  • Xiaoyu Liu

    • Univ of Washington

  • Chong Wang

    • University of Washington

  • William G Holtzmann

    • University of Washington

  • Chaowei Hu

    • University of Washington, Seattle
    • University of Washington

  • Zhaoyu Liu

    • University of Washington

  • Takashi Taniguchi

    • Kyoto Univ
    • National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Sciences
    • NIMS
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, NIMS, Japan
    • International Center for Materials Nanoarchitectonics, Tsukuba
    • National Institue for Materials Science
    • Kyoto University
    • National Institute of Materials Science
    • International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science

  • Jiun-Haw Chu

    • University of Washington
    • Department of Physics, University of Washington, Seattle, WA 98105

  • Ting Cao

    • University of Washington

  • Liang Fu

    • Massachusetts Institute of Technology MI
    • Massachusetts Institute of Technology
    • MIT

  • Wang Yao

    • The University of Hong Kong

  • Cui-Zu Chang

    • Pennsylvania State University
    • The Pennsylvania State University

  • David H Cobden

    • University of Washington

  • Di Xiao

    • University of Washington

  • Xiaodong Xu

    • University of Washington