Resonant tunneling detection of atomic reconstruction in twisted bilayer WSe<sub>2</sub>

ORAL

Abstract

In twisted bilayer WSe2 (tBL-WSe2) at low twist angles, atomic reconstruction is driven based on moiré periodicity. In this study, we perform resonant tunneling measurements and transmission electron microscopy (TEM) observations for tBL-WSe2 samples with various twist angles θBL from 0° to 34°, and reveal the connection between atomic reconstruction and the resulting Γ-point band energy landscape. The resonant tunneling results consistently indicate the presence of two peak currents associated with tunneling into VB-Γ-point states of tBL-WSe2, regardless of the twist angle. As the twist angle increases from θBL = 0°, the energy spacing between these peaks decreases from ~0.7 eV and stabilizes at approximately ~0.6 eV for θBL ≥ 6°. In comparison, the TEM observations show atomic reconstruction patterns persisting up to θBL ~ 5°. It is worth noting that the energy spacing of the VB-Γ-point is significantly influenced by the interlayer distance of WSe2. Therefore, we have shown that we can detect atomic reconstruction in tBL-WSe2 through the changes in interlayer distance, which alter the resonant tunneling behavior into the VB-Γ-point states.

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Presenters

  • Kei Kinoshita

    • Institute of Industrial Science, University of Tokyo

Authors

  • Kei Kinoshita

    • Institute of Industrial Science, University of Tokyo

  • Rai Moriya

    • Institute of Industrial Science, University of Tokyo

  • Momoko Onodera

    • Institute of Industrial Science, University of Tokyo

  • Shota Okazaki

    • Laboratory for Materials and Structures, Tokyo Institute of Technology

  • Yung-Chang Lin

    • National Institute of Advanced Industrial Science and Technology

  • Yijin Zhang

    • Institute of Industrial Science, University of Tokyo

  • Satoru Masubuchi

    • Univ of Tokyo
    • Institute of Industrial Science, University of Tokyo

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science

  • Takashi Taniguchi

    • Kyoto Univ
    • National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Sciences
    • NIMS
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, NIMS, Japan
    • International Center for Materials Nanoarchitectonics, Tsukuba
    • National Institue for Materials Science
    • Kyoto University
    • National Institute of Materials Science
    • International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Ryosuke Senga

    • National Institute of Advanced Industrial Science and Technology

  • Kazu Suenaga

    • The Institute of Scientific and Industrial Research, Osaka University

  • Takao Sasagawa

    • Tokyo Institute of Technology
    • Tokyo Inst of Tech - Yokohama
    • Laboratory for Materials and Structures, Tokyo Institute of Technology

  • Tomoki Machida

    • Univ of Tokyo
    • Institute of Industrial Science, University of Tokyo