Exploring Unconventional Resistivity Scaling in Topological Semimetals for Interconnects Beyond Copper
ORAL
Abstract
Due to surface and disorder scattering, the polynomial increase in resistivity of conventional metals with shrinking dimensions severely impacts the performance of highly scaled integrated circuits. Here we explore a new class of materials – topological semimetals – as an alternative solution. We demonstrate that, through conduction of the topological surface states, the resistivity in topological semimetals reduces with decreasing feature size in the nanometer scale, even in the presence of defects and grain-boundary scattering. This sharply contrasts the scaling of conventional metals, such as Cu. In this talk, we will present first-principles calculation results of a representative Si-CMOS compatible topological semimetal CoSi, and report experimental evidence for surface-dominated transport in CoSi thin films, showing resistivity below that of the bulk single-crystals. Our proof-of-principle studies demonstrate the potential of topological semimetal interconnects. We will conclude with a set of the guidelines for screening topological semimetals for such applications.
*I.G. acknowledges financial support from the Natural Sciences and Engineering Research Council of Canada (Grant No. RGPIN- 2018- 05385), and the Fonds de Recherche du Québec Nature et Technologies. G.L. acknowledges the support under grant number MOE-2019-T2-2-215 and FRC-A-8000194-01-00. H.L. acknowledges the support from the Ministry of Science and Technology (MOST) in Taiwan under grant number MOST 109-2112-M-001-014-MY3. A.B. and C.-Y.H. acknowledge the support by the Air Force Office of Scientific Research under award number FA9550-20-1-0322 and the computational resources of Northeastern University's Advanced Scientific Computation Center (ASCC) and the Discovery Cluster. S.K and R.S. acknowledge funding from SRC under Task No. 2966.
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Publication:1. "Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu", 2020 IEEE International Electron Devices Meeting (IEDM). 2. "Size-Dependent Grain-Boundary Scattering in Topological Semimetals", Physical Review Applied 18 (3), 034053 (2022). 3. "Unconventional Resistivity Scaling in Topological Semimetal CoSi", arXiv:2209.06135 (2022)
Presenters
Ching-Tzu Chen
IBM TJ Watson Research Center
Authors
Ching-Tzu Chen
IBM TJ Watson Research Center
Christian Lavoie
IBM TJ Watson Research Center
Nicholas A Lanzillo
IBM Research
IBM Research, 257 Fuller Road, Albany, NY 12203, USA
Utkarsh Bajpai
IBM Research
IBM Research, 257 Fuller Road, Albany, NY 12203, USA
Oki Gunawan
IBM TJ Watson Research Center
Asir Intisar Khan
Stanford University
Stanford University, USA
Guy Cohen
IBM TJ Watson Research Center
Teodor Todorov
IBM TJ Watson Research Center
John Bruley
IBM Research
Vesna Stanic
IBM Research
Brookhaven National Laboratory
Hsin Lin
Academia Sinica
Ion Garate
Universite de Sherbrooke
Shang-Wei Lien
National Cheng Kung University
Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
Yi-Hsin Tu
National Cheng Kung University
Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
Gengchiau Liang
National University of Singapore
Department of Electrical and Computer Engineering, College of Design and Engineering, National University of Singapore, Singapore
