Spin-defect characteristics of single sulfur vacancies in monolayer MoS<sub>2</sub>
ORAL
Abstract
Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-spectroscopy to B=27T from three emission lines of deterministically induced sulfur vacancies in monolayer MoS2 [1]. The distinct valley-Zeeman splitting and the brightening of dark states necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab-initio calculations identifies the nature of the defect luminescence. Analysis of the optical degree of circular polarization as a function of magnetic field and gate voltage reveals that the Fermi level is a parameter that enables the tunability of the emitter. These combined results show that defects in 2D semiconductors may be utilized for quantum technologies.
[1] A. Hötger et al., arXiv: 2205.10286, to appear (2022)
*The work was supported by Deutsche Forschungsgemeinschaft (DFG). We gratefully acknowledge financial support of the German Excellence Initiative by MCQST and e-conversion. This work has been partially supported by the EC Graphene Flagship project and by ANR projects ANR-17-CE24-0030 and ANR-19-CE09-0026. This work was supported by LNCMI-CNRS, members of the European Magnetic Field Laboratory (EMFL). J.K. acknowledges support by the Alexander von Humboldt foundation. K.W. and T.T. acknowledge support from the JSPS KAKENHI (Grant Numbers 19H05790, 20H00354 and 21H05233). T.A, G.C., D.H., and S.R-A. acknowledge support from the David Lopatie Fellows Program and the ERC Starting grant 101041159. S.R. acknowledges support from the Independent Research Fund Denmark.
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Publication:arXiv: 2205.10286
Presenters
Andreas V Stier
Technische Universität München, Walter Schottky Institut
Technical University of Munich
Authors
Andreas V Stier
Technische Universität München, Walter Schottky Institut
Technical University of Munich
Alexander Hötger
Technische Universität München, Walter Schottky Institut
Tomer Amit
Weizmann Institute of Science
Julian Klein
Massachusetts Institute of Technology
Katja Barthelmi
Technische Universität München, Walter Schottky Institut
Thomas Pelini
Laboratoire National des Champs Magnetiques Intenses
Alex Delhomme
Walter Schottky Institut, Technisch Universität München
Marek Potemski
CNRS/GHMFL
Clement Faugeras
Laboratoire National des Champs Magnetiques Intenses
Galit Cohen
Weizmann Institute of Science
Daniel Hernangomez-Perez
Weizmann Institute of Science
Takashi Taniguchi
National Institute for Materials Science
Kyoto Univ
International Center for Materials Nanoarchitectonics, National Institute of Materials Science
Kyoto University
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
International Center for Materials Nanoarchitectonics, National Institute for Materials Science
National Institute for Materials Science, Japan
National Institute For Materials Science
NIMS
National Institute for Material Science
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
NIMS Japan
Kenji Watanabe
National Institute for Materials Science
Research Center for Functional Materials, National Institute of Materials Science
Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
NIMS
Research Center for Functional Materials, National Institute for Materials Science
National Institute for Materials Science, Japan
Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
NIMS Japan
Christoph Kastl
TU Munich
Jonathan J Finley
Technische Universität München, Walter Schottky Institut
