Optoelectronic Properties of Captured Nd³⁺ in Transition Metal Dichalcogenides

Semiconductor quantum systems suitable for room temperature quantum technology have thus far remained elusive. Compared to natural atomic systems, atom-like semiconductor nanostructures exhibit reduced electron confinement, making their quantum states prone to thermal perturbations. Rare-earth ions, such as neodymium (Nd³⁺), inserted in transition metal dichalcogenides may offer a novel solution. Due to their electronic orbital structure rare-earth ions are known to exhibit optical transitions that are weakly affected by the host material surrounding them. MoS₂ treated electro-chemically with NdCl₃ exhibits photoluminescence signatures within its bandgap that are attributed to the optical transitions of Nd³⁺. The spectral responses obtained from high and low concentration exfoliated layers of MoS₂:Nd³⁺ are being discussed and compared to those of standard solid state quantum emitters such as self-assembled quantum dots.