Influence of temperature on electrical conductivity and bandgap energy in graphene oxide films

Temperature influence on electrical and bandgap energy (E_g) in Graphene oxide films (GO)/baquelite, are presented here. GO films were synthesized by employing the double thermal decomposition (DTD) method. Compositional, vibrational, morphological, and electrical properties were studied. Results revealed that increased temperature (T), increases electrical conductivity and decreases E_g, like a semiconductor material. The main conduction mechanism was described by 3D-variable range hopping and the E_g(T) dependence was described employing the Varshni model. These results suggest that GO films are an attractive material for advanced electronic sensors and devices.