Scanning Tunneling Microscopy Study of Monolayer hBN on α-RuCl<sub>3</sub>

ORAL

Abstract

At the interface between two non-polar materials, significant charge transfer can occur if there is a work function mismatch. This has recently been exploited to heavily doped graphene by simply placing it in contact with high work function materials such as WOx and α­-RuCl3. In this work, we seek to determine whether such charge transfer can occur between two insulating van der Waals materials – namely hexagonal boron nitride (hBN), a wide gap insulator, and α-RuCl3. It has been predicted that monolayer hBN in contact with α-RuCl3 leads to significant interlayer charge transfer that induces a massive shift in the component band structures of each material. We will describe experimental investigations of this effect by using optically-enabled scanning tunneling microscopy/spectroscopy (STM/S) and scanning near-field optical microscopy (SNOM).

*This work is supported by the Air Force Office of Scientific Research.

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Presenters

  • Xuehao Wu

    • Columbia University

Authors

  • Xuehao Wu

    • Columbia University

  • Daniel J Rizzo

    • Columbia University

  • Samuel L Moore

    • Columbia University

  • Madisen A Holbrook

    • Columbia University

  • Thomas P Darlington

    • Columbia University

  • Matthew A Cothrine

    • University of Tennessee

  • Jiaqiang Yan

    • Oak Ridge National Laboratory
    • Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA

  • David G Mandrus

    • University of Tennessee
    • Oak Ridge National Laboratory

  • Stephen E Nagler

    • Oak Ridge National Lab

  • Takashi Taniguchi

    • National Institute for Materials Science
    • Kyoto Univ
    • International Center for Materials Nanoarchitectonics, National Institute of Materials Science
    • Kyoto University
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Science, Japan
    • National Institute For Materials Science
    • NIMS
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
    • NIMS Japan

  • Kenji Watanabe

    • National Institute for Materials Science
    • Research Center for Functional Materials, National Institute of Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • National Institute for Materials Science, Japan
    • Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
    • NIMS Japan

  • Jin Zhang

    • Max Planck Institute for Structure and Dynamics of Matter
    • Max Planck Institute

  • Angel Rubio

    • Max Planck Institute for Structure and Dynamics of Matter
    • Max Planck Institute for the Structure &
    • Max Planck Institute for the Structure & Dynamics of Matter
    • Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, Luruper Chaussee 149, 22761 Hamburg, Germany
    • Max Planck Institute for the Structure &Dynamics of Matter; Center for Computational Quantum Physics (CCQ), Flatiron Institute
    • 1. Max Planck Institute for the Structure and Dynamics of Matter 2. Center for Computational Quantum Physics (CCQ), Flatiron Institute, 162 Fifth Avenue, New York NY

  • Dmitri N Basov

    • Columbia University
    • Department of Physics, Columbia University, New York, NY, USA

  • Abhay N Pasupathy

    • Brookhaven National Laboratory & Columbia University
    • Columbia University