Van der Waals semiconductors as Josephson junction barriers for superconducting qubits

ORAL

Abstract

Two-dimensional van der Waals (vdW) materials are promising platforms for superconducting quantum devices due to their single-crystallinity, low defect density, and lack of dangling bonds. vdW semiconductors—whose band gaps are typically ~5x smaller than in vdW insulators like hBN—can exhibit tunneling through ~10 layers, enabling large-area, homogeneous Josephson junctions with greater participation ratios in ultra-clean vdW interfaces. We characterize the dc and microwave electronic properties of vdW Josephson junctions with ultra-high-purity WSe2 semiconductor barriers and discuss their potential as components for small-footprint, high-quality-factor superconducting qubits.

*This work was supported by the Army Research Office under Cooperative Agreement Number W911NF-22-C-0021. Development of heterostructure assembly techniques at Columbia was supported by the NSF MRSEC program (DMR-2011738).

Presenters

  • Jesse Balgley

    • Columbia University

Authors

  • Jesse Balgley

    • Columbia University
  • Abhinandan Antony

    • Columbia University
  • Xuanjing Chu

    • Columbia University
  • Ethan G Arnault

    • MIT Research Laboratory of Electronics
    • Duke University
    • Massachusetts Institute of Technology
  • Martin V Gustafsson

    • Raytheon BBN Technologies
  • James C Hone

    • Columbia University
  • Kin Chung Fong

    • Raytheon BBN Technologies
    • BBN Raytheon Technologies
    • BBN Technology - Massachusetts
    • Raytheon BBN