Discovery of a new polar magnetic semiconductor MnCuSiTe<sub>3</sub> with spin-induced electric polarization

ORAL

Abstract

Layered polar magnetic semiconductors are currently of emerging interest for their nonlinear and various functional properties. To date, only few layered ferroelectrics have been found while plenty of layered materials show long-range magnetic ordering. In this talk, we report a new layered quaternary chalcogenide MnCuSiTe3 which shows a polar structure at room temperature and multiple magnetic transitions at low temperature. We demonstrated its polar nature with piezoelectric response along with a large Second Harmonic Generation signal at room temperature. Moreover, we also found a remarkable electric polarization below the long-range antiferromagnetic transition at TN=35K. Further, we also probed pyroelectric current below TN. These results suggest MnCuSiTe3 may exhibit a multiferroic state below TN.

*The study at PSU 2DCC-MIP is supported by NSF Cooperative Agreement No. DMR-1539916 and DMR-2039351.

Presenters

  • CHANDAN DE

    • Pennsylvania State University

Authors

  • CHANDAN DE

    • Pennsylvania State University
  • Suguru Yoshida

    • 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University
  • Weiwei Xie

    • Rutgers, The State University of New Jersey
  • Qiang Zhang

    • Oak Ridge National Lab
    • OAK RIDGE NATIONAL LABORATORY
  • Lujin Min

    • Pennsylvania State University
  • Zhiqiang Mao

    • Pennsylvania State University