Measuring Induced gap of InAs/NbTiN using quantum point contacts in Integer Quantum Hall regime

Indium Arsenide (InAs) near surface quantum wells are ideal for the fabrication of semiconductor-superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional electron gas (2DEG) in the quantum well and the states in the superconductor. The possibility to drive the 2DEG into different quantum Hall (QH) states, combined with the strong hybridization between 2DEG and superconductor, makes possible, in principle, the realization of non-Abelian anyons with richer statistics than Majorana modes. We introduce NbTiN-InAs in a strong magnetic field as a potential candidate platform to realize non-Abelian anyons, and study the gap induced via the proximity effect, in strong magnetic fields. To quantify the QH-edge-states’ pairing correlations induced by proximity, we fabricate a quantum point contact (QPC) at the interface between the superconductor and the 2DEG. By varying the gate voltage of the QPC we control the number of QH edge modes which can get in close proximity of the superconductor, and by measuring the QPC conductance we extract the strength of the edge modes’ pairing correlation.