Electrolyte gated synaptic transistor based on an ultra-thin film of La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>
ORAL
Abstract
Developing electronic devices able to reproduce efficiently synaptic functionality is essential towards implementing fast and low energy consuming neuromorphic computing systems. Hybrid ionic/electronic three-terminal synaptic transistors are promising as artificial synapses since they can process information and learn simultaneously. In this work, we report on an electrolyte gated synaptic transistor based on an ultra-thin epitaxial film of La0.7Sr0.3MnO3 which is close to a metal-insulator transition. The dynamic control of oxygen composition of the manganite ultra-thin film with voltage pulses applied through the gate terminal allows reversibly modulating its electronic properties in a non-volatile manner. The conductance modulation can be finely tuned with the amplitude, duration and number of gating pulses, providing different alternatives to gradually update the synaptic weights. The transistor implements essential synaptic features such as excitatory postsynaptic potential, paired-pulse facilitation, long-term potentiation/depression of synaptic weights and spike-time-dependent plasticity (STDP). These results constitute an important step for the development of neuromorphic computing devices based on correlated manganites and open new paths towards enhancing the functionalities of synaptic transistors by using a half metallic ferromagnet as the transistor channel.
*This work was supported by the Spanish MIC, AEI and FEDER under Grant Nos. PID2020-116181RB-C33, PID2020-116181RB-C31 and PGC2018-099422-A-I00 (MCI/AEI/FEDER, UE) and by Comunidad de Madrid under Grant Nos. S2018/NMT-4321 (NanomagCOST-CM) and 2018-T1/IND-11935 (Atracción de Talento). A. Lopez was funded through the FPU Fellowship No. FPU20/02408. IMDEA-Nanociencia acknowledges support from the ‘Severo Ochoa’ Program for Centers of Excellence in R&D (CEX2020-001039-S).
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Publication: A paper related to this work will be submitted in the following days/weeks.
Presenters
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miguel romera
- GFMC, Dept. Física de Materiales, Facultad de Física, Universidad Complutense de Madrid, Madrid 28040, Spain.