GaAs/AlGaAs heterostructures for interference experiments at the v = 5/2 fractional quantum Hall state
ORAL
Abstract
The quantum Hall state at filling factor 5/2 has been predicted to have non-Abelian excitations. The non-Abelian character of these quasiparticle excitations can be probed through interferometry; however, there are challenges to developing a heterostructure which is suitable for these experiments. The heterostructure must be extremely low disorder, support stable gating, and provide a sharp confining potential. We present details of a heterostructure that achieves these requirements and exhibits high quality magnetotransport. This heterostructure design will be useful for fabricating quantum Hall interferometers.
*This work is supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under award number DE-SC0020138.
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Presenters
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Shuang Liang
- Purdue University