Resistive switching in a Bio-Resistive Random-Access Memory device (Bio-ReRAM)

Resistive Random Access Memory (ReRAM) is considered as one of the prominent emerging memory technologies having enhanced storage density, high speed, high scalability, long endurance and low power operation with CMOS compatibility [1,2,3]. Organic biomaterials like pectin, sericin, starch, egg albumen, chitosan etc. are potential elements for environmentally benign, biocompatible, non-toxic, transient, transferable and biodegradable electronic memory devices which uses resistive switching mechanism for information storage and required medical implants. Here, we highlighted the process of extracting and exploiting a biomaterial Aloe vera Gel to fabricate a distinctive type of bio-electronic memory device. This memory cell comprises of a simple MIM structure, in which a thin nanolayer of Aloe vera Gel is sandwiched between an Ag top and ITO bottom electrode. FTIR and UV- Visible spectroscopy have been done to investigate the presence of polymers, bonds, functional groups, constituents for the confirmation of purity and transparency and insulating behavior respectively. The Bipolar resistive switching behavior is observed due to electrochemical growth and dissolution of Ag metallic filaments between top and bottom electrodes over a large number of switching cycles. The behavior of current-voltage curve for SET and RESET state is confirmed by fitting the curve, which gives the desired value of slopes. Detailed analysis revealed that the memory device based on Aloe vera Gel thin film is very robust and reliable because of its high on/off ratio, long retention time and endurance up to 100 cycles. Thus, such biomaterials can provide a promising platform for the sustainable development of green electronics and construct the way towards next generation memory applications.