Hybrid integration of color centers in nanodiamond with silicon nitride nanophotonics
ORAL
Abstract
Integration of quantum emitters with nanophotonic circuits is crucial for realizing scalable and highly connected multi-qubit photonic chip for quantum information processing. Here, we report our recent experimental progress on hybrid integration of silicon-vacancy centers in nanodiamond with silicon nitride nanophotonics. Enabled by an advanced pick-and-place technique and stepped silicon nitride deposition, we demonstrated deterministic and non-evanescent coupling between silicon-vacancy centers in a preselected nanodiamond and silicon nitride nanophotonic devices. Our method can be applied to virtually any color centers in diamond and pave the way towards high-yield and scalable fabrication of large-scale quantum photonic circuits for the study of many-body quantum physics and photon-mediated entanglement generation.
*This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Los Alamos National Laboratory (Contract 89233218CNA000001) and Sandia National Laboratories (Contract DE-NA-0003525). We acknowledge funding from NSF (Grant No. 2032567), AFOSR (Grant No. FA2386-21-1-4084), and the W. M. Keck Foundation.
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Presenters
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Kinfung Ngan
- JILA, department of Physics, University of Colorado Boulder