Submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas

ORAL

Abstract

We report on the results of a study to optimize submicron alloyed ohmic contacts to the two-dimensional electron gas (2DEG) in AlGaAs/GaAs heterostructures. We vary the geometry, annealing parameters, and metal orientation relative to the crystallographic axes of the host GaAs crystal to determine the optimal parameters for low resistance contacts and to study the mechanisms that limit the formation of Ohmic behavior for very small areas. We discuss both electrical and structural characterization data. Our study has generated contact resistance below 600 Ω for contact areas <1 um2.



Work supported by the Quantum Science Center at Oak Ridge National laboratory under contract number DE-AC05-00OR22725.

*Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette IN, 47907Department of Physics and Astronomy, Purdue University, West Lafayette IN, 47907Birck Nanotechnology Center, Purdue University, West Lafayette IN, 47907

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Presenters

  • Matthew Mann

    • Purdue University

Authors

  • Matthew Mann

    • Purdue University

  • James R Nakamura

    • Purdue University

  • Shuang Liang

    • Purdue University

  • Michael J Manfra

    • Purdue University, Microsoft Quantum Purdue
    • Purdue University
    • Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA; Microsoft Quantum Lab, Purdue University, West Lafayette, IN, USA
    • Physics and Astronomy, Purdue University
    • Department of Physics and Astronomy, Birck Nanotechnology Center, School of Electrical and Computer Engineering and Microsoft Quantum Lab West Lafayette, Purdue University
    • Department of Physics and Astronomy and Nanotechnology Center Purdue University, Microsoft Quantum Lab West Lafayette
    • Department of Physics and Astronomy, Birck Nanotechnology Center, School of Materials Engineering and School of Electrical and Computer Engineering, Purdue University