Evaluation of the Photostability of an Organic Solar Cell Using a Field-Effect Transistor

Light-induced deterioration of performance in organic solar cells (OSCs) is a key barrier to commercialization. Because the photostability of OSCs is highly dependent on the material's properties, the most effective way to address this issue is to design a photostable material. The evaluation of the photostability of newly developed materials is made more difficult by the vast range of reasons of photo-instability in a multilayered OSC structure. A top-gate field-effect transistor (FET) as a testbed for assessing the photostability of OSC materials is presented as a solution to this problem. By using a fluoropolymer gate dielectric, this device test platform reduces photo-internal instability's and external causes. In this FET testbed, an OSC material's photostability may be assessed by keeping track of light-induced mobility reduction. As test materials, two typical donor polymer types with comparable chemical compositions and crystallinity are used, and their photostability is assessed. The test findings validate the suggested FET testbed since they match photostability tests made using the conventional OSC configuration. The suggested FET testbed makes it possible to quickly assess the photostability of a recently discovered OSC material, giving material scientists instant input. Thus, the production of photostable OSC materials is accelerated.