Mapping out the topological phase diagram of FeSn

POSTER

Abstract

Metallic kagome magnets exhibit a flat band and a Dirac point in their electronic structure and long-range magnetic order. The combination of these properties creates favorable conditions to search for strongly correlated and topological electronic states. The near-ideal kagome band structure of the intermetallic kagome series X1Y1 offers opportunities to investigate the interplay between strong electronic correlations, topology, and magnetism.

We have used molecular beam epitaxy and electronic transport measurements to study the interplay of magnetism and band topology in thin films of the antiferromagnetic kagome metal FeSn. We will present results from a magnetic field and temperature dependent study of the anomalous Hall effect using transverse resistivity measurements. Combining these measurements with magnetic Monte-Carlo simulations and theoretical model calculations, we map out the topological phase diagram of FeSn over a large temperature range.

*We acknowledge support by the Research Grant Council, and the Croucher Foundation.

Presenters

  • Soumya Sankar

    • The Hong Kong University of Science and Technology
    • HKUST, Department of Physics, Clear Water Bay, Hongkong
    • HKUST

Authors

  • Soumya Sankar

    • The Hong Kong University of Science and Technology
    • HKUST, Department of Physics, Clear Water Bay, Hongkong
    • HKUST
  • RUIZI LIU

    • HKUST, Department of Electrical Engineering, Clear Water Bay, Hongkong
    • HKUST
    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
  • Chengping ZHANG

    • HKUST, Department of Physics, Clear Water Bay, Hongkong
    • The Hong Kong University of Science and Technology
    • HKUST
  • Qifang Li

    • HKU, Department of Physics, Pokfulam Road, Hong Kong and University of Tokyo, Department of Physics, Tokyo
    • HKUST, University of Tokyo
  • KUN QIAN

    • HKUST, Department of Electrical Engineering, Clear Water Bay, Hongkong
    • HKUST
    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
  • Jiangchang Zheng

    • The Hong Kong University of Science and Technology
    • HKUST, Department of Physics, Clear Water Bay, Hongkong
    • HKUST
  • Caiyun Chen

    • The Hong Kong University of Science and Technology
    • IAS,The Hong Kong University of Science and Technology,Hongkong
    • HKUST
  • Zi Yang Meng

    • HKU, Department of Physics, Pokfulam Road, Hong Kong
    • The University of Hong Kong
    • Hong Kong University
  • Kam Tuen Law

    • HKUST, Department of Physics, Clear Water Bay, Hongkong
    • Hong Kong University of Science and Technology
    • HKUST
  • QIMING SHAO

    • HKUST, Department of Electrical Engineering, Clear Water Bay, Hongkong
    • HKUST
    • Hong Kong University of Science and Technology
    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
  • Berthold Jaeck

    • HKUST, Department of Physics, Clear Water Bay, Hongkong
    • The Hong Kong University of Science and Technology