Temperature influence in the magnetoresistance of graphene oxide films

Experimental measurement of temperature influence in the magnetoresistance (MR) of graphene oxide (GO) films, are presented here. GO films were synthesized by pyrolysis method. MR were measured employing a PPM system, with temperature varied from 100 to 400 K and the externally applied magnetic field were varied from 0 to 40 kOe. Positive, negative and reentrant MR were observed in the ranges of 200-300, 360-400 and 100, 330 K; respectively, possibly attributed to type of charge carrier involved on the electrical conduction. These results suggest GO films as an excellent candidate materials to spintronics.