Si/SiGe quantum devices with full 300mm process

Spin qubits in silicon have been considered as one of the most promising candidates for large scale quantum computers due to their long coherence, high-fidelity and compatibility with CMOS technology.? In Si/SiGe devices, the electrons are confined at the high-quality crystalline interface, which reduces potential disorders and decreases charge noises, making it a very promising platform for qubit array up-scaling. However, some challenges remain with the SiGe hetero-structure, among which higher trapping density at the upper SiGe interface, crystalline dislocation, low valley-splitting.

Leveraging the expertise of the CMOS manufacturing industry, we build a strategy to tackle these challenges with an industry-grade 300mm process line: a process flow with different levels of complexity, identification of the key metrics, and characterization at different temperature scales of metrology structures.??

Here we demonstrate the effectiveness of this strategy by sharing the latest results obtained on Si/SiGe quantum devices.