Photon bunching of interlayer exciton electroluminescence in atomically thin semiconductor heterostructures

ORAL

Abstract

Atomically thin semiconductor heterostructures are an ideal system for exploring strong light-matter interactions in the 2D limit. When electrons and holes are individually injected into these materials, they can bind to form interlayer excitons that emit light when they recombine. In this work, we study the electroluminescence of interlayer excitons in MoSe2/WSe2-based heterostructures under a forward bias. In particular, we performed measurements of the second order correlation function and observed photon bunching for a range of bias voltages. We discuss the origin of this bunched electroluminescence and what it elucidates about the quantum state of the interlayer excitons.

*AMMV acknowledges support from National Science Foundation Graduate Research Fellowship under Grant No. DGE1745303. Any opinion, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation

Presenters

  • Andres M Mier Valdivia

    • Harvard University

Authors

  • Andres M Mier Valdivia

    • Harvard University
  • Nadine Leisgang

    • Harvard University
  • Andrew Joe

    • University of California Berkeley
  • Dapeng Ding

    • Harvard University
  • Jue Wang

    • Harvard University
  • Daniel Rhodes

    • University of Wisconsin - Madison
  • Bumho Kim

    • University of Pennsylvania
  • Song Liu

    • Columbia University
  • Kenji Watanabe

    • National Institute for Materials Science
    • Research Center for Functional Materials, National Institute of Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • National Institute for Materials Science, Japan
    • Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
    • NIMS Japan
  • Takashi Taniguchi

    • National Institute for Materials Science
    • Kyoto Univ
    • International Center for Materials Nanoarchitectonics, National Institute of Materials Science
    • Kyoto University
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Science, Japan
    • National Institute For Materials Science
    • NIMS
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
    • NIMS Japan
  • James C Hone

    • Columbia University
  • Mikhail D Lukin

    • Harvard University
  • Hongkun Park

    • Harvard University
  • Philip Kim

    • Harvard University