Dominant scattering mechanisms in InSbAs quantum wells: a promising platform for topological superconductivity
ORAL
Abstract
The two-dimensional electron gas (2DEG) confined in InSb1−xAsx quantum wells is a promising platform to explore topological superconductivity when coupled to a s-wave superconductor due to its higher effective g-factor and stronger spin-orbit coupling compared to commonly used binary InSb and InAs. Stable mesoscopic device operation and low disorder are two desired properties needed for the exploration of topological superconductivity. We report on material quality and dominant scattering mechanisms in a series of 30 nm quantum wells with arsenic mole fractions of x = 0.05, 0.13, and 0.19. Peak mobility at a density of ∼ 2.5 × 1011 cm−2 is 2.4, 2.0 and 1.4 × 105 cm−2/Vs respectively. For samples with x = 0.13 and 0.19, we find a weak dependence of mobility on 2DEG density, suggesting that short-range scattering limits mobility at arsenic concentrations above ∼ x=0.1. The data indicate that alloy disorder is the main source of short-range scattering; an alloy scattering rate of τalloy = 45 nm−1 per % As is extracted. This parameter is important for considerations of impact of disorder on induced superconductivity. We also present data on mesoscopic devices, including analysis of charge noise, drift, and hysteresis at T=0.3K.
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Presenters
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Sara Metti
- Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University