Designing improved zero-pi qubits using small-area capacitors

ORAL

Abstract

The “hard” zero-pi qubit regime—a zero-pi qubit exponentially immune to decoherence—is inaccessible due, in part, to the large capacitance to ground of extant devices. Replacing coplanar capacitors with parallel-plate capacitors, which have dramatically smaller footprints [1, 2], reduces the ground capacitance and extends the accessible regime of present “soft” zero-pi qubits. Here, we show that the newly-accessible parameter regime enables a device with increased immunity to decoherence. We discuss potential design flaws and parameter regimes that need be avoided. Lastly, we discuss new opportunities for qubit control and further device improvements.

[1] Wang, J.IJ., Yamoah, M.A., Li, Q. et al. Hexagonal boron nitride as a low-loss dielectric for superconducting quantum circuits and qubits. Nat. Mater. 21, 398–403 (2022).

[2] Melville, A., Woods, W., Serniak, K., et al. Low-loss parallel-plate capacitor for superconducting quantum circuits. Bulletin of the American Physical Society (2022).

*This material is based upon work supported by the U.S. Department of Energy, Office of Science, National Quantum Information Science Research Centers, Quantum Systems Accelerator and by the U.S. Department of Energy under Air Force Contract No. FA8702-15-D-0001. I.T.R. acknowledges support from the IC Postdoctoral Fellowship. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of the DOE or USAF.

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Presenters

  • Ilan T Rosen

    • Stanford Univ
    • Massachusetts Institute of Technology

Authors

  • Ilan T Rosen

    • Stanford Univ
    • Massachusetts Institute of Technology

  • Junyoung An

    • Massachusetts Institute of Technology
    • Massachusetts Institute of Technology MIT

  • Agustin Di Paolo

    • Massachusetts Institute of Technology
    • Massachusetts Institute of Technology (MIT)

  • Leon Ding

    • Massachusetts Institute of Technology MIT
    • Massachusetts Institute of Technology

  • Max Hays

    • Massachusetts Institute of Technology (MIT)
    • MIT
    • Massachusetts Institute of Technology

  • Thomas M Hazard

    • MIT Lincoln Lab
    • MIT Lincoln Laboratory

  • Kate Azar

    • MIT Lincoln Laboratory

  • Alexander Melville

    • MIT Lincoln Laboratory

  • Bethany M Niedzielski

    • MIT Lincoln Lab
    • MIT Lincoln Laboratory

  • Katrina Silwa

    • MIT Lincoln Laboratory

  • Mollie E Schwartz

    • MIT Lincoln Laboratory

  • Jonilyn L Yoder

    • MIT Lincoln Lab
    • MIT Lincoln Laboratory

  • Jeffrey A Grover

    • Massachusetts Institute of Technology MIT
    • Massachusetts Institute of Technology (MIT)
    • Massachusetts Institute of Technology

  • Kyle Serniak

    • MIT Lincoln Laboratory

  • William D Oliver

    • Massachusetts Institute of Technology MIT
    • Massachusetts Institute of Technology (MIT), MIT Lincoln Laboratory
    • Massachusetts Institute of Technology (MIT)
    • Massachusetts Institute of Technology
    • Massachusetts Institute of Technology, MIT Lincoln Laboratory