Fast compensation of rf-QD charge sensors

ORAL

Abstract

Quantum dot charge sensors allow for efficient spin qubit readout. The tuning of this quantum dot sensor is key for optimised readout. Crosstalk between the gates that define the quantum dot device and the quantum dot sensor often shifts the sensor away from its optimal operation condition. We present an approach for optimally tuning a radio-frequency sensor dot and for keeping it in tune. We use fast algorithms to optimise the readout contrast and to compensate for gate crosstalk. With this aim, we extract the coupling strength between both device and charge sensor gates and the sensing dot. We show that this approach can compensate over large voltage sweeps of greater than 1V , with a fast recalibration procedure to accurately compensate for gate crosstalk anywhere in gate parameter space.

*This work was supported by the Royal Society,the EPSRC National Quantum Technology Hub in Networked Quantum Information Technology (EP/M013243/1),Quantum Technology Capital (EP/N014995/1), EPSRC Platform Grant (EP/R029229/1), the European ResearchCouncil (Grant agreement 948932), the Scientific Service Units of IST Austria through resources provided by thenanofabrication facility and, the FWF-P 30207 and FWF-I 05060 projects.

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Publication: Planned paper of the same title

Presenters

  • Joseph Hickie

    • University of Oxford
    • University of Oxford Materials Department

Authors

  • Joseph Hickie

    • University of Oxford
    • University of Oxford Materials Department

  • Barnaby van Straaten

    • University of Oxford

  • Federico Fedele

    • Niels Bohr Institute, University of Copenhagen
    • University of Oxford
    • University Of Oxford

  • Florian Vigneau

    • University of Oxford
    • University of Oxford Materials Department

  • Daniel Jirovec

    • Institute of Science and Technology Austria

  • Andrea Ballabio

    • L-NESS, Physics Department, Politecnico di Milano
    • Politecnico di Milano
    • L-NESS, Physics Department, Politecnico di Milano, 22100 Como, Italy
    • L-NESS, Physics Department, Politecnico di Milano, via Anzani 42, 22100, Como, Italy
    • L-NESS, Politecnico di Milano

  • Daniel Chrastina

    • L-NESS, Physics Department, Politecnico di Milano
    • Politecnico di Milano
    • L-NESS, Physics Department, Politecnico di Milano, 22100 Como, Italy
    • L-NESS, Physics Department, Politecnico di Milano, via Anzani 42, 22100, Como, Italy
    • L-NESS, Politecnico di Milano

  • Giovanni Isella

    • L-NESS, Physics Department, Politecnico di Milano
    • Politecnico di Milano
    • L-NESS, Physics Department, Politecnico di Milano, 22100 Como, Italy
    • L-NESS, Politecnico di Milano

  • Georgios Katsaros

    • Institute of Science and Technology Austria
    • IST Austria
    • Institute of Science and Technology Austria (ISTA), 3400 Klosterneuburg, Austria
    • Institute of Science and Technology Austria, Am Campus 1, 3400 Klosterneuburg, Austria

  • Natalia Ares

    • University of Oxford