Effects of Boron surface accumulation on the Néel temperature revealed in B-doped Cr<sub>2</sub>O<sub>3</sub> films
ORAL
Abstract
Multi-functional thin films of boron (B) doped Cr2O3 grown by pulsed laser deposition exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of a magnetic field. Isothermal toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 K and 400 K. A strict determination of TN is essential but has remained elusive most likely due to a thermally activated runaway effect of the Néel temperature. This behavior can be understood by considering the B-enrichment due to the phenomenon of surface segregation. Cold Neutron Depth Profiling (cNDP), performed at National Institute of Standards and Technology, points at progressing depletion of B in the bulk and B-accumulation near the surface. By using X-ray Photon Spectroscopy and Spin Hall measurements, we demonstrate a shift in TN towards higher values of ≈ 477 K, associated with the increase in B-concentration within an interfacial layer of about 70 nm.
*Financial support by NSF/EPSCoR RII Track-1: Emergent Quantum Materials and Technologies, OIA-2044049 is acknowledged. The research was performed in part in the NNF: NNCI and the NCMN, supported by NSF under ECCS:2025208, and the NRI. Contributions of the National Institute of Standards and Technology are not subject to copyright.
–
Presenters
-
Ather Mahmood
- University of Nebraska - Lincoln
- Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln
- Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln