Spin defects in hexagonal boron nitride for proximity quantum sensing

ORAL

Abstract

Defects in hexagonal boron nitride (hBN), a 2D Van der Waals (vdW) material, have raised wide range interest for its potential in various quantum applications such as qubits and quantum sensors. Recently, several experiments have shown the ability to optically address spin defect in hBN. Due to the nature of its interlayer vdW interaction, hBN's spin center can be engineered in proximity to target material, posting advantages over their 3D counterparts, such as diamond or silicon carbide. In this talk, we will focus on using first-principle calculation along with model Hamiltonians to discuss properties of hBN defect in stacked heterostructure system for quantum applications.

*This work is supported by the US Department of Energy, Office of Science, National Quantum Information Science Research Centers, Co-design Center for Quantum Advantage (C2QA).

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Presenters

  • Lingnan Shen

    • University of Washington

Authors

  • Lingnan Shen

    • University of Washington

  • Di Xiao

    • University of Washington
    • 1. Department of Materials Science & Engineering, University of Washington, Seattle WA 98915 2. Department of Physics, University of Washington, Seattle WA 98915
    • Department of Materials Science & Engineering, Department of Physics, University of Washington; Pacific Northwest National Laboratory

  • Ting Cao

    • University of Washington
    • Department of Materials Science & Engineering, University of Washington