High-throughput Design of Interfacial Perpendicular Magnetic Anisotropy at Materials Interfaces
ORAL
Abstract
Perpendicular magnetic anisotropy (PMA) at ferromagnet/insulator interfaces has important technological applications in spintronic devices like magnetic recording and sensing devices. In recent years, perpendicular magnetic tunnel junctions (p-MTJs) with strong PMA have attracted increasing interest because of their high stability and low energy consumption. Heusler alloys are a family of compounds with promising magnetic properties for the development of p-MTJs. However, choosing appropriate Heusler ferromagnets and insulators with desirable interfacial properties is challenging. In this talk, I will discuss our recent research progress to search for candidate Heusler/MgO material interfaces with strong PMA and other desired material properties for spintronic technologies using a high-throughput screening approach.
*This work was supported by the Academic Senate General Campus Research Grant Committee at the University of California San Diego. This work used the Extreme Science and Engineering Discovery Environment (XSEDE), which is supported by the National Science Foundation (grant no. ACI-1548562).
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Presenters
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Kesong Yang
- University of California, San Diego