Efficient brightening of momentum-indirect dark excitons in ML InSe
ORAL
Abstract
Manipulating bright and dark excitons in two-dimensional (2D) materials is a key to understanding many-body correlations of exciton and further developing exciton-mediated applications. On the one hand, bright excitons can directly couple to the light and exhibit great oscillator strengths. On the other hand, dark excitons have a much longer population lifetime and diffusion length, greatly enhancing the exciton-matter interactions. In this work, we investigated the photoluminescence of hexagonal boron nitride-encapsulated monolayer indium selenide (ML InSe). Remarkably, for the first time, we found ML InSe exhibits pronounced luminescence from the momentum-indirect dark excitons, comparable to the few-layer and bulk counterparts. The brightening of dark exciton in ML InSe is attributed to the efficient acoustic phonon-assisted recombination facilitated by strong exciton-phonon coupling and the extended wavefunction in momentum space. Moreover, the asymmetric line shape in PL spectra for atomically thin InSe can be well accounted for by a carrier localization model, reflecting the unique properties of long lifetime and diffusion length of dark excitons. These unique excitonic properties of atomically thin InSe provide potential avenues for manipulating the tightly-bound dark excitons of 2D material-based photovoltaic and photocatalytic applications.
*MOST Grant No. 110-2112-M-001-065-MY3MOST Grant No. 110-2124-M-002-012MoE Grant No. 110 L9008 and 111 L9008NSTC Grant No. 111-2112-M-002-047MOST Grant. No. 109-2112-M-001-041-MY3JSPS KAKENHI Grant No. 19H05790, 20H00354 and 21H05233
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Publication:The work is submitted to ACS Nano. It's under review.
Presenters
Shao-Yu Chen
National Taiwan University
Monash University
Authors
Shao-Yu Chen
National Taiwan University
Monash University
Naomi T Paylaga
Molecular Science Technology Program, Taiwan International Graduate Program, Academia Sinica, Taiwan
Chang-Ti Chou
Institute of Atomic and Molecular Sciences, Academia Sinica
Jiawei Ruan
University of California at Berkeley, and Lawrence Berkeley National Laboratory
Department of Physics, University of California, Berkeley
UC Berkeley
Chia-Chun Lin
Institute of Atomic and Molecular Sciences, Academia Sinica
Takashi Taniguchi
National Institute for Materials Science
Kyoto Univ
International Center for Materials Nanoarchitectonics, National Institute of Materials Science
Kyoto University
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
International Center for Materials Nanoarchitectonics, National Institute for Materials Science
National Institute for Materials Science, Japan
National Institute For Materials Science
NIMS
National Institute for Material Science
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
NIMS Japan
Kenji Watanabe
National Institute for Materials Science
Research Center for Functional Materials, National Institute of Materials Science
Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
NIMS
Research Center for Functional Materials, National Institute for Materials Science
National Institute for Materials Science, Japan
Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
NIMS Japan
Raman Sankar
Inst of Physics Academia Sinica
Institute of Physics, Academia Sinica
Yang-hao Chan
Academia Sinica
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
Institute of Atomic and Molecular Sciences, Academia Sinica
Lawrence Berkeley National Laboratory
Wei-Hua Wang
Institute of Atomic and Molecular Sciences, Academia Sinica