Delta-Doped GeV<sup>-</sup> in Diamond

ORAL

Abstract

Owing to its strong optical transition and inversion symmetry, GeV- centers are an alluring system for engineering many-body physics. However, realizing center-to-center interactions has been a challenge due to the dilute stochastic formation of color centers. In this work, we demonstrate the creation of GeV- in diamond via in-situ depth localized doping (δ-doping) and discuss ways to overcome this interaction limitation. We report in-situ Germanium incorporation of 0.5 ppm and confinement to a sub-20nm layer. Additionally, we will describe the diamond growth, dopant incorporation, and present the optical characterization.

*The authors acknowledge funding from NSF HQAN 2016136, NSF MRSEC DMR-2011854, and DOE QNEXT.This material is based upon work supported by Laboratory Directed Research and Development (LDRD) funding from Argonne National Laboratory, provided by the Director, Office of Science, of the U.S. Department of Energy under Contract No. DE-AC02-06CH11357.

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Presenters

  • Ian N Hammock

    • University of Chicago

Authors

  • Ian N Hammock

    • University of Chicago

  • Nazar Delegan

    • Argonne National Laboratory

  • Xinghan Guo

    • University of Chicago

  • F. Joseph F Heremans

    • Argonne National Laboratory

  • Alexander A High

    • University of Chicago