Overdamped Phase Diffusion in hBN Encapsulated Graphene Josephson Junctions

ORAL

Abstract

Hexagonal Boron-Nitride encapsulated Graphene based Josephson junctions (SGS) are in an active stage for studying superconducting phenomena and applications. As such, it is necessary to study how interaction with the environment affects junction behavior. This work characterizes damping behavior by experimentally investigating the phase diffusion mechanism. At non-zero temperature, the SGS can be briefly excited above its superconducting state by thermal noise, the state is quickly recovered, albeit with a net phase shift. The phase shift results in a measurable voltage, even at zero bias current. Josephson junctions can be underdamped or overdamped regime as dictated by the interaction with its environment. Vast majority of previous experimental studies have shown SGS devices to be slightly-to moderately under damped[1]. Here, we conclusively demonstrate overdamped behavior in a SGS, characterized via phase diffusion[2]. Moreover, we present a framework in order to design future underdamped devices. Our results have relevance for SGS-based quantum information devices.

[1] Phys. Rev. Lett. 107, 137005 (2011); Nature Phys. 12, 318 (2015); Phys. Rev. Lett. 117, 237002 (2016).

[2] Phys. Rev. Research 4, 023203 (2022).

*We acknowledge funding from: Texas A&M University, Hong Kong Research Grants Council (GRF) 11303619, U.S. Department of Energy under Award DE-SC0002765.

Publication: J. Tang, M.T. Wei, A. Sharma, E. G. Arnault, A. Seredinski, Y. Mehta, K. Watanabe, T. Taniguchi, F. Amet, I. Borzenets, "Overdamped Phase Diffusion in hBN Encapsulated Graphene Josephson Junctions", Phys. Rev. Research 4, 023203, DOI: /10.1103/PhysRevResearch.4.023203 2022

Presenters

  • Amis Sharma

    • Texas A&M University

Authors

  • Amis Sharma

    • Texas A&M University
  • Jiayin Tang

    • City University of Hong Kong
  • Ethan G Arnault

    • MIT Research Laboratory of Electronics
    • Duke University
    • Massachusetts Institute of Technology
  • Ming Tso Wei

    • University of Maryland, College Park
  • Andrew M Seredinski

    • Wentworth Institute of Technology
    • Wentworth Inst of Tech
  • Yash Mehta

    • Appalachian State University
  • Kenji Watanabe

    • National Institute for Materials Science
    • Research Center for Functional Materials, National Institute of Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • National Institute for Materials Science, Japan
    • Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
    • NIMS Japan
  • Takashi Taniguchi

    • National Institute for Materials Science
    • Kyoto Univ
    • International Center for Materials Nanoarchitectonics, National Institute of Materials Science
    • Kyoto University
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Science, Japan
    • National Institute For Materials Science
    • NIMS
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
    • NIMS Japan
  • Francois Amet

    • Appalachian State University
  • Ivan V Borzenets

    • City Univ of Hong Kong