Low temperature growth of BaZrS₃ thin film by magnetron sputtering

Chalcogenide perovskite is an emerging class of semiconductor materials with potential applications in electronics and optoelectronics. BaZrS₃ is one of the most studied chalcogenide perovskites due to its high absorption coefficient, a visible bandgap below 2 eV, high stability, and relatively mild synthesis conditions. In this work we report the synthesis of BaZrS₃ thin films using magnetron sputtering of Ba and Zr metal targets, followed by CS₂ sulfurization at relatively low temperatures. NaF was used improve the film crystallinity. Sample growth on conductive substrates was also attempted, with an eye for device fabrications. Photo-detector devices were fabricated using low temperature grown BaZrS₃. Our work demonstrates a new way of fabricating BaZrS₃ thin films and devices at moderate conditions.