Structural comparisons of dark currents through superlattice infrared photodetectors in the LWIR region
ORAL
Abstract
Type-II superlattice (T2SL) photodetectors are currently leading the way in optoelectronic detector technology
due to their tuneable bandgap and optoelectronic characteristics [1]. The requirement of cryogenic cooling for IR
detectors is a significant barrier inhibiting their broad applications. Consequently, the study of dark current is
crucial for photodetectors. We compare dark currents of two structures: the 14 monolayer (ML) /7 monolayer
(ML) and the 12ML/2ML InAs/GaSb type II superlattice (SL) p-i-n photodetector. The structures are simulated
using Sentaurus TCAD in the reverse bias voltage range at a temperature of 77K. We observe lower values of
generation recombination and trap assisted tunnelling current density through 12ML/2ML SL p-i-n detector
than 14ML/7ML SL p-i-n detector. Band-to-band tunnelling current is lower for 14ML/7ML SL p-i-n detector
because of higher tunnelling mass [1] of 14ML/7ML SL.
[1] Delmas, M,A comprehensive set of simulation tools to model and design high-performance Type-II InAs/GaSb superlattice infrared
detectors,Quantum Sensing and Nano Electronics and Photonics XVI (Vol. 10926, pp. 29-39). SPIE
due to their tuneable bandgap and optoelectronic characteristics [1]. The requirement of cryogenic cooling for IR
detectors is a significant barrier inhibiting their broad applications. Consequently, the study of dark current is
crucial for photodetectors. We compare dark currents of two structures: the 14 monolayer (ML) /7 monolayer
(ML) and the 12ML/2ML InAs/GaSb type II superlattice (SL) p-i-n photodetector. The structures are simulated
using Sentaurus TCAD in the reverse bias voltage range at a temperature of 77K. We observe lower values of
generation recombination and trap assisted tunnelling current density through 12ML/2ML SL p-i-n detector
than 14ML/7ML SL p-i-n detector. Band-to-band tunnelling current is lower for 14ML/7ML SL p-i-n detector
because of higher tunnelling mass [1] of 14ML/7ML SL.
[1] Delmas, M,A comprehensive set of simulation tools to model and design high-performance Type-II InAs/GaSb superlattice infrared
detectors,Quantum Sensing and Nano Electronics and Photonics XVI (Vol. 10926, pp. 29-39). SPIE
*The authors acknowledge the funding from ISRO under ISRO-IITB Space Technology Cell.
–
Presenters
-
Pooja Kawde
- CRNTS,IITB